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feat(L-S30): voltage island analysis — Crown47 ROM, restraint_ctrl, k3 ALU @ 0.7 V#57

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feat(L-S30): voltage island analysis — Crown47 ROM, restraint_ctrl, k3 ALU @ 0.7 V#57
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feat/lane-l-s30-voltage-island

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L-S30 Voltage Island Analysis

Branch: feat/lane-l-s30-voltage-islandfeat/tt-v7-power
Anchor: φ² + φ⁻² = 3 · DOI 10.5281/zenodo.19227877

Goal

Identify low-activity blocks that can run at 0.7 V vs core 0.9 V for +15 TOPS/W in Phase 2 silicon.
TT process does not allow multi-VDD in user space — this PR delivers analysis + marker RTL only.

Blocks identified for the island

Block Module Activity α Leakage saving @ 0.7 V
Crown47 ROM crown47_rom.v 0.04 −68%
Restraint ctrl restraint_ctrl.v 0.07 −68%
k3 ALU path alu9_decoder.v k3 0.08 −68%

Power model: V² ratio (0.7/0.9)² = 0.603 → −39.7% dynamic on island.
Phase 2 extended island (+idle sparse PEs) projects to +15 TOPS/W.

Files added

  • docs/S30_VOLTAGE_ISLAND_ANALYSIS.md — full analysis: activity factors, leakage model, partition diagram, Phase 2 synthesis constraints
  • src/crown47_rom.v — 47-entry 8-bit constant ROM (new block)
  • src/restraint_ctrl.v — 4-state FSM issue-throttle controller (new block)
  • src/voltage_island_marker.v — synthesisable marker, ~20 cells, emits lp_island_status[2:0] + island_id=2'b01
  • test/tb_voltage_island_marker.v — 28 tests covering enable logic, ROM content, FSM throttle/release

Simulation

iverilog -g2005: 0 errors, 3 timescale-inheritance warnings only
vvp: PASS 28  FAIL 0 — ALL TESTS PASSED

Compliance

  • R-SI-1: no * operators ✅
  • Pure Verilog-2005 ✅
  • No SystemVerilog ✅
  • Cell budget: ~74 total (54 island blocks + ~20 marker) ✅

Phase 2 path

Synthesis constraints for set_voltage_area + lpflow_lsbuf level shifters are documented in the analysis MD. Implementation deferred to Phase 2 silicon (GF16 CMOS or SG13G2 with multi-VDD support).

Lane L-S30 Voltage Island — low-power partition for Crown47 ROM,
restraint_ctrl, and k3 ALU path. Analysis shows 0.7 V operation for
these blocks (α ≤ 0.08) yields −68% leakage and −39.7% dynamic power
on the island, supporting +15 TOPS/W target in Phase 2 silicon.

Files added:
  docs/S30_VOLTAGE_ISLAND_ANALYSIS.md  — full analysis with activity
      factors, leakage model, partition diagram, Phase 2 synthesis
      constraints (documentation-only for TT process)
  src/crown47_rom.v       — 47-entry 8-bit constant ROM (α=0.04)
  src/restraint_ctrl.v    — 4-state issue-throttle FSM (α=0.07)
  src/voltage_island_marker.v — synthesisable partition marker (~20 cells)
      emits lp_island_status[2:0] and island_id=2'b01 (S30)
  test/tb_voltage_island_marker.v — 28 tests, all PASS under iverilog

iverilog result: 28/28 PASS (T1-T7: enable logic, ROM content, FSM)

R-SI-1: no * operator; pure Verilog-2005; no SystemVerilog.
Cell budget: ~54 cells for island blocks + ~20 marker = ~74 total.

Anchor: φ² + φ⁻² = 3
DOI: 10.5281/zenodo.19227877
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